Simulation and interpretation of fast rise time light-activated p-i-n diode switches

Author

Sun, C.K. ; Yu, P.K.L. ; Chang, Ching-Ten ; Albares, D.J.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

39

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2240

Lastpage

2247

Abstract

A simulation program and a comprehensive physical interpretation for risetimes and output powers of the long transit p-i-n diode under high and low optical-pulse excitations as well as at various impedances are presented. The physical interpretation explains the mechanisms of the switch risetime limitation in terms of the cancellation electric field due to separated photocarriers, the induced electric field with various RC time delays, and the optical-pulse energy risetime. Under high optical excitations and long circuit risetimes, the output risetime is determined only by the electric field cancellation time associated with the collapse of the total electric field and decreases with increasing optical-pulse excitation. This is in contrast to the case of low optical-pulse excitations where the risetime is determined by both the circuit risetime and the optical-pulse energy risetime

Keywords

digital simulation; electronic engineering computing; equivalent circuits; finite difference methods; p-i-n photodiodes; semiconductor device models; semiconductor switches; RC time delays; electric field cancellation time; fast rise time; induced electric field; light-activated; optical-pulse energy risetime; optical-pulse excitations; output powers; p-i-n diode switches; separated photocarriers; simulation program; Circuit simulation; Computational modeling; Equations; Optical pulses; Optical switches; P-i-n diodes; Power generation; Sun; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158794

Filename

158794