Title :
Short-channel pMOSTs in a high-resistivity silicon substrate. II. Noise performance
Author :
Vanstraelen, Guy ; Simoen, Eddy ; Claeys, Cor ; Declerck, Gilbert J.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
10/1/1992 12:00:00 AM
Abstract :
For pt.I, see ibid., vol.39, no.10, p.2268-77 (1992). The noise performance, important for the use of p-channel transistors on high-resistivity silicon in analog applications, is investigated. This is done for the two operation modes: bulk (|Vgs|<|VT|) and surface (| Vgs|>|VT|). For the studied transistors, both modes are characterized by a 1/f noise spectrum extending to frequencies of up to ≈100 Hz, and followed by a white-noise spectrum, determined by the substrate resistance
Keywords :
equivalent circuits; insulated gate field effect transistors; random noise; semiconductor device models; semiconductor device noise; 1/f noise spectrum; Si; bulk mode; high resistivity Si substrate; noise performance; p-channel transistors; pMOS device; short-channel pMOST; substrate resistance; surface mode; white-noise spectrum; 1f noise; Circuit noise; Current-voltage characteristics; Frequency; MOSFETs; Signal to noise ratio; Silicon; Superconducting device noise; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
