Neutralization of wafer charging in nitrogen gas

Author

Inaba, Hitoshi ; Ohmi, Tadahiro ; Morita, Mizuho ; Nakamura, Masakazu ; Yoshida, Takanori ; Okada, Takao

Author_Institution

Takasago Thermal Eng. Co. Ltd., Kanagawa, Japan

Volume

5

Issue

4

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

359

Lastpage

367

Abstract

In an attempt to prevent wafers from getting charged in the N₂ gas sealed semiconductor manufacturing process, the authors have developed a neutralization method employing ultraviolet (UV) irradiation. This method depends on the fact that the N₂ molecule is ionized when it absorbs ultraviolet light. This method is superior to the neutralization method employing corona discharge in terms of neutralization capability in the inert gas ambient. The neutralization rate is very high; the residual potential caused by the unbalanced ion distribution is always 0 V after the neutralization. Neutralization is rapid. The neutralization capability is enhanced by decreasing the ambient pressure. The neutralization capability is further enhanced by replacing the N₂ gas ambient with the Ar gas ambient

Keywords

integrated circuit manufacture; nitrogen; semiconductor device manufacture; static electrification; Ar gas ambient; N₂ gas sealed process; UV irradiation; ambient pressure; inert gas ambient; neutralization method; semiconductor manufacturing process; ultraviolet light; wafer charging; Argon; Corona; Electrodes; Fluid flow; Nitrogen; Semiconductor device manufacture; Semiconductor device noise; Surface contamination; Transportation; Voltage;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.175368

Filename

175368