Title :
a-Si:H (alloy) p-i-n superlattice solar cell contacts
Author :
Varonides, Argyrios C. ; Rothwarf, Allen
Author_Institution :
Dept. of Electron. Eng., Scranton Univ., PA, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
A means of increasing the open-circuit voltage of p-i-n amorphous silicon-based solar cells without degrading their other properties is proposed. This is accomplished through the use of superlattices that replace the n and p contact regions. The proposed structure is a-Si:H/a-Si0.8N0.2:H for the p contact and a-Si:H/a-Si0.5C0.5:H for the n contact. Using reasonable values for relevant parameters, the proposed structure may have an open-circuit voltage higher than that of present cells by as much as 0.20 V
Keywords :
Fermi level; amorphous semiconductors; electrical contacts; elemental semiconductors; hydrogen; semiconductor superlattices; solar cells; Si:H-Si0.5C0.5:H n contact; Si:H-Si0.8N0.2:H p contact; neutrality condition; open-circuit voltage; p-i-n device; superlattice solar cell contacts; Amorphous materials; Conducting materials; Conductivity; Degradation; Helium; PIN photodiodes; Photovoltaic cells; Quantization; Semiconductor superlattices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
