Title :
ROM-Based Direct Digital Synthesizer at 24 GHz Clock Frequency in InP DHBT Technology
Author :
Turner, Steven Eugene ; Chan, Richard T. ; Feng, Jeffrey T.
Author_Institution :
BAE Syst., Nashua, NH
Abstract :
A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor technology is reported. The DDS has a 12 b phase accumulator and a ROM-based phase converter. The DDS is capable of synthesizing output frequencies up to 12 GHz in steps that are 1/4096 of the 24 GHz clock rate. The worst case measured spurious free dynamic range (SFDR) is 30.7 dBc and the average SFDR over all frequency control words is 40.4 dBc. The DDS test circuit is implemented with 4470 transistors and it consumes 19.8 W of power.
Keywords :
III-V semiconductors; direct digital synthesis; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; read-only storage; DDS; DHBT technology; InP; ROM-based direct digital synthesizer; ROM-based phase converter; frequency 24 GHz; heterojunction bipolar transistor technology; power 19.8 W; spurious free dynamic range; Accumulator; Indium Phosphide (InP); digital to analog converter (DAC); direct digital synthesizer (DDS); emitter coupled logic (ECL); heterojunction bipolar transistor (HBT); high-speed integrated circuits; read-only memory (ROM);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2008.2001025
