ROM-Based Direct Digital Synthesizer at 24 GHz Clock Frequency in InP DHBT Technology

Author

Turner, Steven Eugene ; Chan, Richard T. ; Feng, Jeffrey T.

Author_Institution

BAE Syst., Nashua, NH

Volume

18

Issue

8

fYear

2008

Firstpage

566

Lastpage

568

Abstract

A direct digital synthesizer (DDS) implemented in InP double heterojunction bipolar transistor technology is reported. The DDS has a 12 b phase accumulator and a ROM-based phase converter. The DDS is capable of synthesizing output frequencies up to 12 GHz in steps that are 1/4096 of the 24 GHz clock rate. The worst case measured spurious free dynamic range (SFDR) is 30.7 dBc and the average SFDR over all frequency control words is 40.4 dBc. The DDS test circuit is implemented with 4470 transistors and it consumes 19.8 W of power.

Keywords

III-V semiconductors; direct digital synthesis; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; read-only storage; DDS; DHBT technology; InP; ROM-based direct digital synthesizer; ROM-based phase converter; frequency 24 GHz; heterojunction bipolar transistor technology; power 19.8 W; spurious free dynamic range; Accumulator; Indium Phosphide (InP); digital to analog converter (DAC); direct digital synthesizer (DDS); emitter coupled logic (ECL); heterojunction bipolar transistor (HBT); high-speed integrated circuits; read-only memory (ROM);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.2001025

Filename

4571119