Title :
A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz
Author :
Wu, Yifeng ; Jacob-Mitos, Matt ; Moore, Marcia L. ; Heikman, Sten
Author_Institution :
Transphorm Inc., Goleta, CA
Abstract :
A 175-to-350 V hard-switched boost converter was constructed using a high-voltage GaN high-electron-mobility transistor grown on SiC substrate. The high speed and low on-resistance of the wide-band-gap device enabled extremely fast switching transients and low losses, resulting in a high conversion efficiency of 97.8% with 300-W output power at 1 MHz. The maximum efficiency was 98.0% at 214-W output power, well exceeding the state of the art of Si-based converters at similar frequencies.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; power convertors; reliability; wide band gap semiconductors; GaN; HEMT boost converter; frequency 1 MHz; hard-switched boost converter; high electron mobility transistor; power 214 W; power 300 W; switching transient; voltage 175 V to 350 V; Frequency conversion; Gallium nitride; HEMTs; Jacobian matrices; MODFETs; Power generation; Power supplies; Silicon carbide; Switches; Voltage; Converter; GaN; efficiency; high voltage; highelectron-mobility transistors (HEMTs); power device; switching power supply;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2000921
