Plasma immersion ion implantation doping using a microwave multipolar bucket plasma

Author

Qin, Shu ; McGruer, Nicol E. ; Chan, Chung ; Warner, Keith

Author_Institution

Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA

Volume

39

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2354

Lastpage

2358

Abstract

Using plasma immersion ion implantation, silicon has been doped with boron in a high-voltage pulsed microwave multipolar bucket plasma system. Diborane gas (1%) diluted in helium is used as an ion source. A sheet resistance of 57 Ω/□ and an implanted dose of 1.9×10¹⁵/cm² are obtained in 10 min. when the target potential is pulsed to -10 kV with a 1% duty cycle. The boron profile in the silicon substrate is different from that predicted for a conventional 10-keV ion implantation. Silicon p-n junctions fabricated by this technique are of good quality

Keywords

boron; doping profiles; elemental semiconductors; ion implantation; p-n homojunctions; silicon; B₂H₆; B₂H₆-He; Si:B; doping profile; implanted dose; microwave multipolar bucket plasma; p-n junctions; plasma immersion ion implantation; sheet resistance; target potential; Boron; Helium; Ion implantation; Ion sources; Plasma accelerators; Plasma immersion ion implantation; Plasma sources; Semiconductor device doping; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158808

Filename

158808