Title :
OMVPE-grown InAlAs/InGaAs/InP MODFET´s with performance comparable to those grown by MBE
Author :
Tong, Minh ; Nummila, Kari ; Ketterson, Andrew ; Adesida, Ilesanmi ; Aina, L. ; Mattingly, M.
Author_Institution :
Illinois Univ., Urbana-Champaign, IL, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
The current-gain cutoff frequency (fT) performances of InAlAs/InGaAs/InP MODFETs on OMVPE-grown heterostructures and MBE-grown heterostructures are compared. InAlAs/InGaAs/InP MODFETs on OMVPE-grown heterostructures were fabricated with different gate lengths from 2.5 to 0.27 μm. An effective electron saturation velocity of 2.0×107 cm/s is deduced from an fT×Lg product of 32 GHz-μm. An extrinsic DC transconductance as high as 1020 mS/mm and an fT of over 114 GHz at room temperature were achieved for 0.27-μm gate-length MODFETs. It is shown that the device characteristics obtained at all gate lengths compare favorably with the best results reported in the literature for MODFETs on heterostructures grown by MBE
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 0.27 to 2.5 micron; 1020 mS; 114 GHz; InAlAs-InGaAs-InP; MODFETs; OMVPE-grown heterostructures; current-gain cutoff frequency; electron saturation velocity; extrinsic DC transconductance; gate lengths; Aerospace engineering; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Temperature; Wet etching;
Journal_Title :
Electron Devices, IEEE Transactions on
