Anomalous subthreshold slopes in thin-film accumulation-mode SOI p-channel MOSFET´s

Author

Tokunaga, Kenji ; Sturm, J.C.

Author_Institution

Dept. of Electr. Eng., Hitachi Ibaraki Tech. Coll., Ibaraki, Japan

Volume

39

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

2413

Lastpage

2415

Abstract

The authors report the observation of anomalously sharp (<60 mV/dec) subthreshold slopes in accumulation-mode p-channel MOSFETs on ultrathin SOI films. Despite the different current flow mechanism, the subthreshold slope in accumulation-mode p-channel devices shows a similar substrate bias dependence to that of inversion-mode n-channel devices. Impact ionization near the drain region and electron trapping at the backside interface in the case of a large substrate bias are the main factors for the wide range of subthreshold slopes. Anomalously sharp subthreshold slopes can be avoided by control of the lower SOI interface charge condition

Keywords

accumulation layers; electron traps; impact ionisation; insulated gate field effect transistors; semiconductor-insulator boundaries; SOI interface charge condition; accumulation mode SOI p-channel MOSFET; anomalous subthreshold slopes; backside interface; current flow mechanism; electron trapping; impact ionization; large substrate bias; ultrathin SOI films; Chaos; Electron devices; Epitaxial layers; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; MOSFET circuits; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158818

Filename

158818