Multilevel Storage in Lateral Top-Heater Phase-Change Memory

Author

Yin, You ; Ota, Kazuhiro ; Higano, Naoya ; Sone, Hayato ; Hosaka, Sumio

Author_Institution

Dept. of Production Sci. & Technol., Gunma Univ., Kiryu

Volume

29

Issue

8

fYear

2008

Firstpage

876

Lastpage

878

Abstract

A lateral top-heater phase-change memory (LTH-PCM) is proposed and investigated for multilevel storage (MLS). The active layers are composed of a 50-nm-thick TiN layer as a top heater and a 150-nm-thick SbTeN layer. A number of intermediate levels, which are induced by electric currents, are exhibited in experimental results. They are distinct and very stable. The reversible switching of multilevels is successfully demonstrated in the LTH-PCM device. The MLS results from the gradual enlargement of crystalline region between electrodes by Joule heating according to our analysis.

Keywords

antimony compounds; digital storage; phase changing circuits; tellurium compounds; titanium compounds; Joule heating; LTH-PCM device; SbTeN; TiN; crystalline region; electrodes; intermediate levels; lateral top-heater phase-change memory; multilevel storage; size 150 nm; size 50 nm; Argon; Conductivity; Crystallization; Multilevel systems; Phase change materials; Phase change memory; Semiconductor films; Sputtering; Tin; Voltage; Lateral; multilevel storage (MLS); nonvolatile memories; phase-change memories (PCMs); top heater;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000793

Filename

4571137