DocumentCode
813135
Title
High-Gain Amplifiers With Amorphous-Silicon Thin-Film Transistors
Author
Sambandan, Sanjiv
Author_Institution
Electron. Mater. & Devices Lab., Palo Alto Res. Center, Palo Alto, CA
Volume
29
Issue
8
fYear
2008
Firstpage
882
Lastpage
884
Abstract
This letter demonstrates amplifier design with amorphous-hydrogenated-silicon thin-film transistors (TFTs) for high dc gain. High dc gain is achieved by using positive feedback to improve load impedance. The transfer characteristics of the amplifier are resistant to threshold voltage shift in the TFTs.
Keywords
DC amplifiers; amorphous semiconductors; elemental semiconductors; feedback amplifiers; hydrogen; silicon; thin film transistors; DC gain; Si:H; a-Si:H TFT; amorphous-hydrogenated-silicon; high-gain amplifiers; load impedance; positive feedback; thin-film transistors; transfer characteristics; Chemical elements; Driver circuits; Feedback; Geometry; Helium; Impedance; Signal design; Thin film transistors; Threshold voltage; Transconductance; Amplifier; thin-film transistor (TFT);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.2000951
Filename
4571139
Link To Document