DocumentCode :
813177
Title :
Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors
Author :
Ceuster, D. De ; Flandre, D. ; Colinge, J.P. ; Cristoloveanu, S.
Author_Institution :
Microelectron. Lab., Katholieke Univ., Leuven, Belgium
Volume :
32
Issue :
4
fYear :
1996
fDate :
2/15/1996 12:00:00 AM
Firstpage :
278
Lastpage :
279
Abstract :
The serial-parallel association of SOI MOSFETs proves to be useful for increasing the breakdown voltage and the early voltage of transistor structures. This permits one to realise current mirrors with an output-to-input current ratio close to unity in the weak, moderate and strong inversion regimes of the MOSFETs
Keywords :
MOSFET circuits; analogue circuits; pulse amplifiers; silicon-on-insulator; SOI MOSFET current-mirror; breakdown voltage; early voltage; moderate inversion regime; output-to-input current ratio; serial-parallel association; strong inversion regime; weak inversion regime;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960252
Filename :
490916
Link To Document :
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