A New Embedded One-Time-Programmable MNOS Memory Fully Compatible to LTPS Fabrication for System-on-Panel (SOP) Applications

Author

Lee, Te-Yu ; Chiu, Chih-Chieh ; Liu, Yu-Chung ; Liu, Chih-Chung ; King, Ya-Chin ; Lin, Chrong-Jung

Author_Institution

Instn. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu

Volume

29

Issue

8

fYear

2008

Firstpage

906

Lastpage

908

Abstract

A metal-nitride-oxide-silicon (MNOS) one-time-programmable cell with fast programming, high reliability, and fully low-temperature polycrystalline-silicon (LTPS) panel compatible process has been proposed for system-on-panel applications. This cell adopting tunneling programming scheme has a very wide reading window with superior program efficiency. Furthermore, fast program efficiency and high disturb immunity are both obtained in the LTPS panel technology by a divided voltage operation. Through channel FN programming, superior data retention and low-power operation are therefore achieved. The new embedded MNOS cell has provided a promising one-time-programming memory solution on the LTPS panels´ applications.

Keywords

MOS memory circuits; flat panel displays; memory architecture; programmable circuits; tunnelling; LTPS fabrication; SOP; channel FN programming; embedded one-time-programmable MNOS memory; low-power operation; low-temperature polycrystalline-silicon panel; metal-nitride-oxide-silicon; one-time-programmable cell; superior data retention; system-on-panel; tunneling programming scheme; Circuits; Dielectric substrates; Displays; Fabrication; Scanning electron microscopy; Silicon; Standards development; Thin film transistors; Tunneling; Voltage; Fully compatible; low-temperature polycrystalline silicon (LTPS); one-time programmable (OTP); thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000831

Filename

4571146