Title :
Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications
Author :
Jiyong Woo ; Daeseok Lee ; Euijun Cha ; Sangheon Lee ; Sangsu Park ; Hyunsang Hwang
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea
Abstract :
In this letter, we discuss our technique for fabricating a vertically stacked ReRAM device composed of one selector and one resistor (1S-1R). We demonstrate that the nanoscale via-hole structure and 1-kb array architecture of selector device exhibit higher current density ( ~ 107 A/cm2) and reliability, and we introduce bipolar resistive switching element-a conductive-bridge RAM that can be stacked on top of the selector device. The resulting integrated 1S-1R device performs robust bipolar switching operations and significantly reduces the leakage current in cross-point applications.
Keywords :
bridge circuits; current density; leakage currents; random-access storage; semiconductor device reliability; semiconductor storage; 1S-1R device; CB-RAM; array architecture; bidirectional selector; bipolar resistive switching element; bipolar switching operations; conductive-bridge RAM; cross-point array applications; current density; leakage current; nanoscale via-hole structure; reliability; resistor; selector device; vertically stacked ReRAM device; Memory architecture; Nanoscale devices; Random access memory; Resistors; Cross-point array architecture; one selector and one resistor (1S-1R); selector device;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2285583
