Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-Point Array Applications

Author

Jiyong Woo ; Daeseok Lee ; Euijun Cha ; Sangheon Lee ; Sangsu Park ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1512

Lastpage

1514

Abstract

In this letter, we discuss our technique for fabricating a vertically stacked ReRAM device composed of one selector and one resistor (1S-1R). We demonstrate that the nanoscale via-hole structure and 1-kb array architecture of selector device exhibit higher current density ( ~ 10⁷ A/cm²) and reliability, and we introduce bipolar resistive switching element-a conductive-bridge RAM that can be stacked on top of the selector device. The resulting integrated 1S-1R device performs robust bipolar switching operations and significantly reduces the leakage current in cross-point applications.

Keywords

bridge circuits; current density; leakage currents; random-access storage; semiconductor device reliability; semiconductor storage; 1S-1R device; CB-RAM; array architecture; bidirectional selector; bipolar resistive switching element; bipolar switching operations; conductive-bridge RAM; cross-point array applications; current density; leakage current; nanoscale via-hole structure; reliability; resistor; selector device; vertically stacked ReRAM device; Memory architecture; Nanoscale devices; Random access memory; Resistors; Cross-point array architecture; one selector and one resistor (1S-1R); selector device;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2285583

Filename

6655947