Drive Current Enhancement in Silicon-on-Quartz MOSFETs

Author

Nakajima, Yoshikata ; Sasaki, Kenji ; Hanajiri, Tatsuro ; Toyabe, Toru ; Sugano, Takuo

Author_Institution

Bio-Nano Electron. Res. Center, Toyo Univ., Saitama

Volume

29

Issue

8

fYear

2008

Firstpage

944

Lastpage

945

Abstract

We proposed the advantages of MOSFETs fabricated on silicon-on-quartz (SOQ) wafers over MOSFETs on silicon-on-insulator (SOI) wafers. We demonstrated by device simulation that ionized acceptors under a buried oxide (BOX) layer are eliminated in an SOI MOSFET with a BOX layer that is thick enough in an SOQ MOSFET, and carriers in the channel are induced more effectively by the gate electric field in SOQ MOSFETs than in SOI MOSFETs. Additionally, we confirmed experimentally the enhancement of induced carriers and its resultant improvement of the subthreshold characteristics and transconductance characteristics in SOQ MOSFETs.

Keywords

MOSFET; buried layers; carrier mobility; SOI MOSFET; SOQ MOSFET; buried oxide layer; device simulation; drive current enhancement; gate electric field; silicon-on-insulator wafers; silicon-on-quartz MOSFET; silicon-on-quartz wafers; Educational programs; Educational technology; Germanium silicon alloys; Helium; Impurities; MOSFETs; National electric code; Silicon germanium; Silicon on insulator technology; Transconductance; Carriers; gate electric field; silicon-on-insulator (SOI); silicon-on-quartz (SOQ);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2001121

Filename

4571156