Scanning Electron Microscope Measurements of Diffusion Length in Neutron-Irradiated Silicon

Bulk measurements of minority carrier diffusion length in irradiated n-type silicon have been made to determine damage constants for comparison with those derived from photoconductivity decay measurements and to investigate behavior at large neutron fluences. Photoconductivity decay measurements were consistent with those performed previously, while the diffusion length damage constants were consistent with those previously observed on solar cells. Differences in the two sets of values are ascribed to trapping effects and to the higher injection level prevailing in the transient measurements.