Title :
A Compact Model for Oxide Breakdown Failure Distribution in Ultrathin Oxides Showing Progressive Breakdown
Author :
Tous, Santi ; Wu, Ernest Y. ; Sune, Jordi
Author_Institution :
Dept. d´´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona
Abstract :
The cumulative distribution of the failure time, which includes the time to first breakdown (BD) and the progressive current growth time, is the function of interest for reliability of ultrathin gate oxides. Depending on oxide area and stress conditions, oxide failure is determined by a single BD spot or by multiple competing spots. In this letter, we present an analytical compact model for the final failure distribution which is valid for any failure percentile and which is applicable to both the single and the multiple BD spot limits. This model is intended to be the core of a reliability assessment methodology either for the SiO2-based or high-k gate insulators of interest for the hp45 technology node and beyond.
Keywords :
failure analysis; high-k dielectric thin films; semiconductor device breakdown; semiconductor device reliability; cumulative failure distribution; high-k gate insulators; oxide breakdown failure distribution; reliability assessment methodology; ultrathin gate oxides; ultrathin oxides; Analytical models; CMOS technology; Electric breakdown; Failure analysis; High K dielectric materials; High-K gate dielectrics; Insulation; MOS devices; Microelectronics; Stress; Dielectric breakdown (BD); MOS devices; reliability theory;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2001178
