Title :
Electrical properties of plasma-grown gate oxides on tensile-strained Si1-yCy alloy
Author :
Mahapatra, R. ; Maikap, S. ; Kar, G.S. ; Ray, S.K.
Author_Institution :
Dept. of Phys. & Meteorol., Indian Inst. of Technol., Kharagpur, India
fDate :
8/15/2002 12:00:00 AM
Abstract :
Growth of gate-quality ultrathin (< 100 Å) oxides directly on tensile-strained Si1-yCy alloy layers has been investigated using microwave O2-plasma discharge. The electrical properties of oxide grown on an Si0.993C0.007 layer have been studied using a metal-oxide-semiconductor structure. Fixed oxide charge density and mid-gap interface state density are found to be 2.5 × 1011 cm-2 and 2.0 × 1011 cm-2 eV-1 , respectively. Oxide film exhibits hole trapping behaviour under Fowler-Nordheim constant current stressing
Keywords :
MOS capacitors; Raman spectra; hole traps; interface states; oxidation; plasma materials processing; semiconductor device breakdown; Al-SiO2-SiC-Si; Fowler Nordheim constant current stressing; MOS capacitor; Raman spectrum; Si-Si phonon peak; SiC; breakdown field; capacitance-voltage characteristics; conductance-voltage characteristics; electrical properties; epitaxial layers; fixed oxide charge density; gate-quality ultrathin oxides; hole trapping behaviour; low-temperature oxidation; metal-oxide-semiconductor structure; mid-gap interface state density; plasma-grown gate oxides; tensile-strained alloy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020541
