Title :
Measurement of the Neutron Energy Dependence of Base Current Degradation of a Silicon Bipolar Transistor
Author :
McKenzie, J.M. ; Witt, L.J.
Author_Institution :
Sandia Laboratories Albuquerque, New Mexico 87115
Abstract :
A measurement of the neutron energy dependence of base current of a small signal bipolar transistor is given. The theory of the method, the neutron radiation damage calibration and measurement, the neutron dosimetry, and an experiment to test the concepts and to obtain preliminary results are described.
Keywords :
Bipolar transistors; Current measurement; Degradation; Energy measurement; Gain measurement; Laboratories; Neutrons; Nuclear weapons; Semiconductor devices; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1973.4327417
