DocumentCode
813630
Title
Nanotechnology enables a new memory growth model
Author
Hwang, Chang-gyu
Author_Institution
Memory Div., Samsung Electron. Co. Ltd., South Korea
Volume
91
Issue
11
fYear
2003
fDate
11/1/2003 12:00:00 AM
Firstpage
1765
Lastpage
1771
Abstract
As we enter the nanotechnology era, a big shift in paradigm comes to the memory industry. The traditional computer industry for dynamic RAM is expected to mature its memory-bit consumption with a relatively low growth rate. Meanwhile, the memory consumption and high-density memory usage in mobile handsets and digital consumer applications will grow very fast. For these new applications, NAND Flash memory will be the key enabling technology and its easy scaling and multibit/cell capabilities require a new memory growth model. The well-known Moore\´s law still holds for most cases after the quarter-century history of the integrated circuit industry. However, the paradigm shift in the memory industry requires a new memory growth model: "a twofold increase per year in memory density." This paper will cover some details of recent memory technologies, application trends, and the proposed new memory growth model.
Keywords
DRAM chips; NAND circuits; flash memories; nanotechnology; NAND Flash memory; digital consumer applications; dynamic RAM; memory growth model; mobile handset; multilevel cell; nanotechnology; semiconductor memory technology; Application software; Computer industry; DRAM chips; Electronics industry; History; Integrated circuit technology; Mobile handsets; Moore´s Law; Nanotechnology; Random access memory;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/JPROC.2003.818323
Filename
1240069
Link To Document