• DocumentCode
    813630
  • Title

    Nanotechnology enables a new memory growth model

  • Author

    Hwang, Chang-gyu

  • Author_Institution
    Memory Div., Samsung Electron. Co. Ltd., South Korea
  • Volume
    91
  • Issue
    11
  • fYear
    2003
  • fDate
    11/1/2003 12:00:00 AM
  • Firstpage
    1765
  • Lastpage
    1771
  • Abstract
    As we enter the nanotechnology era, a big shift in paradigm comes to the memory industry. The traditional computer industry for dynamic RAM is expected to mature its memory-bit consumption with a relatively low growth rate. Meanwhile, the memory consumption and high-density memory usage in mobile handsets and digital consumer applications will grow very fast. For these new applications, NAND Flash memory will be the key enabling technology and its easy scaling and multibit/cell capabilities require a new memory growth model. The well-known Moore\´s law still holds for most cases after the quarter-century history of the integrated circuit industry. However, the paradigm shift in the memory industry requires a new memory growth model: "a twofold increase per year in memory density." This paper will cover some details of recent memory technologies, application trends, and the proposed new memory growth model.
  • Keywords
    DRAM chips; NAND circuits; flash memories; nanotechnology; NAND Flash memory; digital consumer applications; dynamic RAM; memory growth model; mobile handset; multilevel cell; nanotechnology; semiconductor memory technology; Application software; Computer industry; DRAM chips; Electronics industry; History; Integrated circuit technology; Mobile handsets; Moore´s Law; Nanotechnology; Random access memory;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/JPROC.2003.818323
  • Filename
    1240069