Title : 
Nanotechnology enables a new memory growth model
         
        
            Author : 
Hwang, Chang-gyu
         
        
            Author_Institution : 
Memory Div., Samsung Electron. Co. Ltd., South Korea
         
        
        
        
        
            fDate : 
11/1/2003 12:00:00 AM
         
        
        
        
            Abstract : 
As we enter the nanotechnology era, a big shift in paradigm comes to the memory industry. The traditional computer industry for dynamic RAM is expected to mature its memory-bit consumption with a relatively low growth rate. Meanwhile, the memory consumption and high-density memory usage in mobile handsets and digital consumer applications will grow very fast. For these new applications, NAND Flash memory will be the key enabling technology and its easy scaling and multibit/cell capabilities require a new memory growth model. The well-known Moore\´s law still holds for most cases after the quarter-century history of the integrated circuit industry. However, the paradigm shift in the memory industry requires a new memory growth model: "a twofold increase per year in memory density." This paper will cover some details of recent memory technologies, application trends, and the proposed new memory growth model.
         
        
            Keywords : 
DRAM chips; NAND circuits; flash memories; nanotechnology; NAND Flash memory; digital consumer applications; dynamic RAM; memory growth model; mobile handset; multilevel cell; nanotechnology; semiconductor memory technology; Application software; Computer industry; DRAM chips; Electronics industry; History; Integrated circuit technology; Mobile handsets; Moore´s Law; Nanotechnology; Random access memory;
         
        
        
            Journal_Title : 
Proceedings of the IEEE
         
        
        
        
        
            DOI : 
10.1109/JPROC.2003.818323