Interference with a frequency-modulated semiconductor laser

Author

Tsuchida, Hidemi

Author_Institution

Electrotech. Lab., Ibaraki, Japan

Volume

7

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

1906

Lastpage

1911

Abstract

Theoretical and experimental studies of interference with a semiconductor laser whose frequency is directly modulated by the injection current are described. Theoretical expressions for the DC component and first harmonic contained in the interference signal are derived. It is shown that they can be used for estimating the frequency deviation of a modulated laser and for demodulating the interference signal, respectively. The influence of intensity modulation caused by direct modulation is also considered. Experiments were carried out using Michelson and polarization interferometers illuminated by directly modulated AlGaAs semiconductor lasers

Keywords

III-V semiconductors; aluminium compounds; frequency modulation; gallium arsenide; light interference; optical modulation; semiconductor junction lasers; AlGaAs laser; III-V semiconductor; Michelson interferometers; demodulation; frequency modulation; injection current; intensity modulation; interference; polarization interferometers; semiconductor laser; Fiber lasers; Frequency estimation; Frequency measurement; Frequency modulation; Intensity modulation; Interference; Interferometers; Laser theory; Optical interferometry; Semiconductor lasers;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.41608

Filename

41608