DocumentCode :
813644
Title :
Interference with a frequency-modulated semiconductor laser
Author :
Tsuchida, Hidemi
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
Volume :
7
Issue :
12
fYear :
1989
fDate :
12/1/1989 12:00:00 AM
Firstpage :
1906
Lastpage :
1911
Abstract :
Theoretical and experimental studies of interference with a semiconductor laser whose frequency is directly modulated by the injection current are described. Theoretical expressions for the DC component and first harmonic contained in the interference signal are derived. It is shown that they can be used for estimating the frequency deviation of a modulated laser and for demodulating the interference signal, respectively. The influence of intensity modulation caused by direct modulation is also considered. Experiments were carried out using Michelson and polarization interferometers illuminated by directly modulated AlGaAs semiconductor lasers
Keywords :
III-V semiconductors; aluminium compounds; frequency modulation; gallium arsenide; light interference; optical modulation; semiconductor junction lasers; AlGaAs laser; III-V semiconductor; Michelson interferometers; demodulation; frequency modulation; injection current; intensity modulation; interference; polarization interferometers; semiconductor laser; Fiber lasers; Frequency estimation; Frequency measurement; Frequency modulation; Intensity modulation; Interference; Interferometers; Laser theory; Optical interferometry; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.41608
Filename :
41608
Link To Document :
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