Title :
Highly Responsive, Solution-Based Al/PbS and Au-Ti/PbS Schottky Photodiodes for SWIR Detection
Author :
Heves, Emre ; Gurbuz, Yasar
Author_Institution :
Nanotechnol. Res. & Nanotech Applic. Center, Sabanci Univ., Istanbul, Turkey
Abstract :
We realized two PbS colloidal quantum dot (CQD) based Schottky photodetectors, formed of indium tin oxide anode, the photosensitive PbS layer, and a Schottky contacts of titanium-gold (Ti-Au) stack for higher longer lifetime and aluminum (Al) for higher responsivity. Long capping ligands of PbS QDs were replaced with shorter ones and layer-by-layer deposition method was applied to form pinhole-free and uniform PbS CQD films, enabling better responsivity and longer lifetime. In Al/PbS, under 2 V reverse bias and 5 mW/cm2 illumination at 1550 nm, 0.195 A/W responsivity, 15.6% quantum efficiency, and 8.19 ×1010 Jones normalized detectivity is achieved. In Au-Ti/PbS, under 3 V reverse bias and 5 mW/cm2 illumination, 0.667 A/W responsivity, 53.3% quantum efficiency, and 2.12 ×1010 Jones normalized detectivity is achieved.
Keywords :
IV-VI semiconductors; Schottky barriers; Schottky diodes; aluminium; electrochemical electrodes; image sensors; lead compounds; photodetectors; photodiodes; semiconductor quantum dots; titanium; Al-PbS; Au-Ti-PbS; CQD; Jones normalized detectivity; SWIR detection; Schottky contact; Schottky photodetector; Schottky photodiode; colloidal quantum dot; efficiency 15.6 percent; efficiency 53.3 percent; indium tin oxide anode; layer-by- layer deposition method; long capping ligand; photosensitive layer; pinhole-free film; size 1550 nm; voltage 2 V; voltage 3 V; Films; Indium tin oxide; Metals; Photodiodes; Quantum dots; Schottky diodes; Colloidal quantum dots (CQD); PbS colloidal quantum dots; SWIR imaging; photodiode;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2013.2288920