DocumentCode :
813949
Title :
Prediction of wafer state after plasma processing using real-time tool data
Author :
Lee, Sherry F. ; Spanos, Costas J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume :
8
Issue :
3
fYear :
1995
fDate :
8/1/1995 12:00:00 AM
Firstpage :
252
Lastpage :
261
Abstract :
Empirical models based on real-time equipment signals are used to predict the outcome (e.g., etch rates and uniformity) of each wafer during and after plasma processing. Three regression and one neural network modeling methods were investigated. The models are verified on data collected several weeks after the initial experiment, demonstrating that the models built with real-time data survive small changes in the machine due to normal operation and maintenance. The predictive capability can be used to assess the quality of the wafers after processing, thereby ensuring that only wafers worth processing continue down the fabrication line. Future applications include real-time evaluation of wafer features and economical run-to-run control
Keywords :
least squares approximations; semiconductor process modelling; sputter etching; statistical analysis; empirical models; etch rates; fabrication line; neural network modeling methods; plasma processing; predictive capability; real-time tool data; regression modeling methods; run-to-run control; wafer state; Costs; Etching; Fabrication; Plasma applications; Plasma materials processing; Plasma properties; Predictive models; Production facilities; Semiconductor device manufacture; Semiconductor device modeling;
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/66.400999
Filename :
400999
Link To Document :
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