Title :
Matching properties of linear MOS capacitors
Author :
Singh, Rajinder ; Bhattacharyya, A.B.
Author_Institution :
Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
fDate :
3/1/1989 12:00:00 AM
Abstract :
Various random error mechanisms which affect the matching of MOS capacitors have been studied in a systematic manner. For the dimensions and technology considered, normalized random error in capacitor-ratio has been observed to have an inverse square-root dependence on the capacitor-area, a linear dependence on the perimeter-to-area ratio, and a very weak dependence, n/sup 16/, on the capacitor-ratio n. Increasing the intercapacitor gap slows down its dependence on n.<>
Keywords :
capacitors; metal-insulator-semiconductor devices; capacitor-area; capacitor-ratio; intercapacitor gap; inverse square-root dependence; linear MOS capacitors; matching; normalized random error; perimeter-to-area ratio; random error mechanisms; Artificial intelligence; Capacitance measurement; Degradation; Design methodology; Dielectrics; Filters; Geometry; MOS capacitors; Switching converters; Testing;
Journal_Title :
Circuits and Systems, IEEE Transactions on
