Title :
Roles of corners in matching of linear MOS capacitors
Author :
Singh, Rajinder ; Bhattacharyya, A.B.
Author_Institution :
Centre for Appl. Res. in Electron., Indian Inst. of Technol., New Delhi, India
fDate :
3/1/1989 12:00:00 AM
Abstract :
Statistically highly significant improvement in matching MOS capacitors has been observed for a cornerless structure in which photolithographically defined corners are avoided. For the considered dimensions and technology, the improvement in matching is by a factor of two. This amounts to an economy of the silicon area by a factor of four in switched-capacitor, A/D (analog-to-digital), and D/A converter applications
Keywords :
analogue-digital conversion; capacitors; digital-analogue conversion; metal-insulator-semiconductor devices; switched capacitor networks; A/D convertor; D/A converter; cornerless structure; corners; linear MOS capacitors; matching; photolithographically defined corners; switched-capacitor; CMOS process; CMOS technology; Circuit testing; Circuits and systems; Degradation; Dielectrics; Geometry; MOS capacitors; Silicon; Switching converters;
Journal_Title :
Circuits and Systems, IEEE Transactions on
