Using wavelength-dependent emissivity of semiconductor wafer to model heat transfer in rapid thermal processing station

Author

Belikov, Sergey ; Martynov, Helen ; Kaplinsky, Michael ; Manikopoulos, Constantine

Author_Institution

Dept. of Electr. & Comput. Eng., New Jersey Inst. of Technol., Newark, NJ, USA

Volume

8

Issue

3

fYear

1995

fDate

8/1/1995 12:00:00 AM

Firstpage

360

Lastpage

362

Abstract

This paper develops an approach for using a wavelength-dependent emissivity model of a semiconductor wafer in calculating heat transfer in a rapid thermal processing (RTP) station. The wafer emissivity is modeled by a generalized polynomial in wavelength where the coefficients may be functions of temperature. A comparison of experimental data with simulated results for a silicon wafer is provided

Keywords

approximation theory; emissivity; heat transfer; polynomials; rapid thermal processing; semiconductor process modelling; temperature distribution; 1000 to 1400 K; Si; Si wafer; generalized polynomial; heat transfer model; rapid thermal processing station; semiconductor wafer; simulation; wafer spectral emissivity; wafer temperatures; wavelength-dependent emissivity; Control systems; Heat transfer; Heating; Lamps; Rapid thermal processing; Semiconductor device modeling; Silicon; Temperature control; Temperature measurement; Temperature sensors;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.401015

Filename

401015