Title :
Investigation of the thermal behavior of a RTP furnace
Author :
Henda, R. ; Scheid, E. ; Bielle-Daspet, D.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
fDate :
8/1/1995 12:00:00 AM
Abstract :
The results of a full model accounting for the thermal behavior of a commercially available rapid thermal processing furnace are given. In particular, emphasis has been placed on achieving a flat temperature profile over the wafer. System parameters allowing RTP equipment to be improved are reviewed
Keywords :
rapid thermal processing; semiconductor process modelling; temperature distribution; RTP equipment improvement; RTP furnace; Si; Si wafer; flat temperature profile; lamp contouring; physical based thermal model; radiation shielding; rapid thermal processing; readsorbed energy distribution; temperature distribution; thermal behavior; transient wafer temperature uniformity; wafer temperature profile; Furnaces; Inductors; Lamps; Optical films; Rapid thermal processing; Semiconductor device modeling; Silicon; Steel; Temperature control; Thermal conductivity;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
