DocumentCode
814179
Title
Analytical Threshold Voltage Model for Double-Gate MOSFETs With Localized Charges
Author
Kang, Hongki ; Han, Jin-Woo ; Choi, Yang-Kyu
Author_Institution
Sch. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon
Volume
29
Issue
8
fYear
2008
Firstpage
927
Lastpage
930
Abstract
An analytical threshold voltage model for double-gate MOSFETs with localized charges is developed. From the 2-D Poisson´s equation with parabolic potential approximation, a compact threshold voltage model is derived. The proposed model is then verified with a 2-D device simulator. The model can be used to investigate hot-carrier-induced device degradation for various device dimensions and various charge distributions.
Keywords
MOSFET; Poisson equation; approximation theory; semiconductor device models; threshold elements; MOSFET; Poissons equation; analytical threshold voltage model; localized charges; parabolic potential approximation; Analytical models; Boundary conditions; Channel bank filters; Degradation; Hot carrier effects; Hot carriers; MOSFETs; Poisson equations; Region 1; Threshold voltage; Double-gate (DG) MOSFETs; hot-carrier effects (HCEs); localized charge; surface potential; threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2008.2000965
Filename
4574585
Link To Document