DocumentCode
814235
Title
Analysis of the source inductance effect on the power performance of high development HEMTs in the Ka-Band
Author
Gaquiere, C. ; Bonte, B ; Théron, D. ; Crosnier, Y. ; Favre, J
Author_Institution
CNRS, Inst. d´´Electron et de Microelectron. du Nord, Villeneuve d´´Ascq, France
Volume
5
Issue
8
fYear
1995
fDate
8/1/1995 12:00:00 AM
Firstpage
243
Lastpage
245
Abstract
This paper provides an analysis of the power performance degradations of interdigitated HEMTs in millimeter wave range as the total gate width increases. It investigates the possibility of optimizing the device topology by combining a limited number of via holes and airbridge source connections in order to offer a good cost-performance trade off
Keywords
S-parameters; inductance; millimetre wave field effect transistors; millimetre wave measurement; millimetre wave power transistors; power HEMT; power field effect transistors; Ka-Band; airbridge source connections; cost-performance trade off; device topology; interdigitated HEMT; millimeter wave range; power performance; source inductance effect; total gate width; via holes; Bridge circuits; Degradation; Fingers; Frequency; HEMTs; Inductance; MODFETs; Millimeter wave communication; Millimeter wave technology; Performance analysis;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.401079
Filename
401079
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