DocumentCode
814322
Title
Parallel computational techniques for simulating dopant diffusion in silicon
Author
Biswas, R. ; Amaratunga, G.A.J.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
136
Issue
3
fYear
1989
fDate
6/1/1989 12:00:00 AM
Firstpage
135
Lastpage
137
Abstract
Parallel computational techniques have been used to simulate dopant diffusion in Si (e.g. source/drain fabrication of a CMOS transistor) on an ICL distributed array processor (DAP), a single-instruction multiple-data-stream (SIMD) type machine. The finite element and conjugate gradient methods were used for solution. An order of magnitude reduction in computation time has been achieved.<>
Keywords
diffusion in solids; digital simulation; electronic engineering computing; elemental semiconductors; finite element analysis; parallel algorithms; physics computing; semiconductor device models; semiconductor doping; silicon; ICL distributed array processor; SIMD type machine; Si; computation time reduction; conjugate gradient methods; digital simulation; dopant diffusion; elemental semiconductors; parallel computational techniques; single-instruction multiple-data-stream; Diffusion processes; Finite element methods; Parallel algorithms; Semiconductor device doping; Semiconductor device modeling; Silicon; Simulation;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
17641
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