Title :
Parallel computational techniques for simulating dopant diffusion in silicon
Author :
Biswas, R. ; Amaratunga, G.A.J.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
6/1/1989 12:00:00 AM
Abstract :
Parallel computational techniques have been used to simulate dopant diffusion in Si (e.g. source/drain fabrication of a CMOS transistor) on an ICL distributed array processor (DAP), a single-instruction multiple-data-stream (SIMD) type machine. The finite element and conjugate gradient methods were used for solution. An order of magnitude reduction in computation time has been achieved.<>
Keywords :
diffusion in solids; digital simulation; electronic engineering computing; elemental semiconductors; finite element analysis; parallel algorithms; physics computing; semiconductor device models; semiconductor doping; silicon; ICL distributed array processor; SIMD type machine; Si; computation time reduction; conjugate gradient methods; digital simulation; dopant diffusion; elemental semiconductors; parallel computational techniques; single-instruction multiple-data-stream; Diffusion processes; Finite element methods; Parallel algorithms; Semiconductor device doping; Semiconductor device modeling; Silicon; Simulation;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
