Title :
Reliable 1.3 μm high speed trenched buried heterostructure lasers grown entirely by atmospheric MOVPE
Author :
Lealman, I.F. ; Cooper, D.M. ; McIlroy, P.W.A. ; Cockburn, A.J. ; Cole, S. ; Harlow, M. ; Skeats, A.P.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
2/1/1990 12:00:00 AM
Abstract :
The authors report on reliable high-power wide-bandwidth 1.3 μm trenched buried heterostructure (TBH) lasers grown by atmospheric MOVPE. The devices have bandwidths of up to 11 GHz and maintain excellent CW performance and long lifetimes. Data are presented for all of the above parameters, along with a discussion of the design considerations of the device structure
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 11 GHz; CW performance; InGaAs-InP; atmospheric MOVPE; bandwidths; design considerations; high speed trenched buried heterostructure lasers; lifetimes; semiconductor laser;
Journal_Title :
Optoelectronics, IEE Proceedings J
