DocumentCode
814326
Title
Reliable 1.3 μm high speed trenched buried heterostructure lasers grown entirely by atmospheric MOVPE
Author
Lealman, I.F. ; Cooper, D.M. ; McIlroy, P.W.A. ; Cockburn, A.J. ; Cole, S. ; Harlow, M. ; Skeats, A.P.
Author_Institution
British Telecom Res. Labs., Ipswich, UK
Volume
137
Issue
1
fYear
1990
fDate
2/1/1990 12:00:00 AM
Firstpage
2
Lastpage
6
Abstract
The authors report on reliable high-power wide-bandwidth 1.3 μm trenched buried heterostructure (TBH) lasers grown by atmospheric MOVPE. The devices have bandwidths of up to 11 GHz and maintain excellent CW performance and long lifetimes. Data are presented for all of the above parameters, along with a discussion of the design considerations of the device structure
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 11 GHz; CW performance; InGaAs-InP; atmospheric MOVPE; bandwidths; design considerations; high speed trenched buried heterostructure lasers; lifetimes; semiconductor laser;
fLanguage
English
Journal_Title
Optoelectronics, IEE Proceedings J
Publisher
iet
ISSN
0267-3932
Type
jour
Filename
45764
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