DocumentCode
814339
Title
MOSFET Detector Evaluation
Author
Ciarlo, Dino R.
Author_Institution
University of California, Lawrence Livermore Laboratory Livermore, California 94550
Volume
21
Issue
1
fYear
1974
Firstpage
390
Lastpage
394
Abstract
Metal-oxide-semiconductor devices have been evaluated as low-energy (250 eV to 50 keV) x-ray dosimeters. They can be used to measure dosages as low as 1 rad (SiO2) to as high as 105 rad (SiO2). Their small size and basic simplicity make it possible to form arrays of dosimeters for x-ray imaging. When compared to thermoluminescent dosimeters (TLD´s), photographic film, and thermopiles, MOSFET dosimeters offer distinct advantages in terms of their small size, their sensitivity to photon energies below 10 keV, and their adaptability to an electrical readout system.
Keywords
Atomic measurements; Detectors; Dielectric substrates; Ionizing radiation; MOS devices; MOSFET circuits; Radiation effects; Voltage; X-ray detection; X-ray imaging;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1974.4327488
Filename
4327488
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