DocumentCode :
814360
Title :
Advances in CdTe Gamma-Ray Detectors
Author :
Serreze, H.B. ; Entine, G. ; Bell, R.O. ; Wald, F.V.
Author_Institution :
Tyco Laboratories, Inc. Waltham, Massachusetts 02154
Volume :
21
Issue :
1
fYear :
1974
Firstpage :
404
Lastpage :
407
Abstract :
Performance of halogen-doped CdTe gamma - ray detectors has been improved significantly by the development of new device fabrication methods. In particular, these detectors do not exhibit any of the previously observed polarization effects. Room temperature resolution of 7% at 122 keV has been achieved using applied fields of less than 50 V/mm for detectors up to 100 mm3 in volume.
Keywords :
Charge carrier processes; Crystalline materials; Electromagnetic wave absorption; Electron mobility; Fabrication; Gamma ray detection; Gamma ray detectors; Polarization; Semiconductor materials; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1974.4327490
Filename :
4327490
Link To Document :
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