• DocumentCode
    814426
  • Title

    Spectral gain measurements for semiconductor laser diodes

  • Author

    Lam Sin Cho, L.A. ; Smowton, P.M. ; Thomas, B.

  • Author_Institution
    Sch. of Electr. Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
  • Volume
    137
  • Issue
    1
  • fYear
    1990
  • fDate
    2/1/1990 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    68
  • Abstract
    Spectral gain studies were carried out for two different laser diode structures from the recordings of Fabry-Perot modes. The Cassidy method was found to be superior to other methods for determining gain and for application even at laser threshold. Maximum gain versus current values were derived for both AlGaAs/GaAs and InGaAsP/InP lasers, and showed good agreement with published theoretical values
  • Keywords
    III-V semiconductors; aluminium compounds; gain measurement; gallium arsenide; gallium compounds; indium compounds; laser variables measurement; semiconductor junction lasers; AlGaAs-GaAs; Cassidy method; Fabry-Perot modes; InGaAsP-InP; laser threshold; maximum gain versus current; semiconductor laser diodes; spectral gain measurement;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings J
  • Publisher
    iet
  • ISSN
    0267-3932
  • Type

    jour

  • Filename
    45775
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=814426