Title :
Spectral gain measurements for semiconductor laser diodes
Author :
Lam Sin Cho, L.A. ; Smowton, P.M. ; Thomas, B.
Author_Institution :
Sch. of Electr. Electron. & Syst. Eng., Univ. of Wales Coll. of Cardiff, UK
fDate :
2/1/1990 12:00:00 AM
Abstract :
Spectral gain studies were carried out for two different laser diode structures from the recordings of Fabry-Perot modes. The Cassidy method was found to be superior to other methods for determining gain and for application even at laser threshold. Maximum gain versus current values were derived for both AlGaAs/GaAs and InGaAsP/InP lasers, and showed good agreement with published theoretical values
Keywords :
III-V semiconductors; aluminium compounds; gain measurement; gallium arsenide; gallium compounds; indium compounds; laser variables measurement; semiconductor junction lasers; AlGaAs-GaAs; Cassidy method; Fabry-Perot modes; InGaAsP-InP; laser threshold; maximum gain versus current; semiconductor laser diodes; spectral gain measurement;
Journal_Title :
Optoelectronics, IEE Proceedings J
