A 2GHz down converter IC fabricated by an advanced Si bipolar process (DNP-III)

Author

Inamori, H. ; Matsuoka, A. ; Nemoto, N. ; Watanabe, Y. ; Miyazaki, S. ; Ueda, Y. ; Kanamori, S. ; Tanaka, K. ; Nakata, T. ; Furutsuka, T.

Author_Institution

NEC Corp., Kanagawa, Japan

Volume

36

Issue

3

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

707

Lastpage

711

Abstract

A Si down-converter IC has been developed in order to satisfy the growing market for realizing lower cost in commercial microwave equipment, such as DBS (direct-broadcasting satellite) receivers and the GPS (Global Positioning System). Using a novel 0.6-μm-emitter-width Si bipolar process, called DNP-III (direct nitride passivated base surface) for an f_T of 20 GHz, more than 10 dB of gain has been successfully obtained in the 1-2 GHz frequency range. Power dissipation is typically 125 mW for 5-V single supply voltage. Results confirmed the usefulness of the application of Si bipolar process to commercial microwave products

Keywords

MMIC; bipolar integrated circuits; direct broadcasting by satellite; elemental semiconductors; frequency convertors; silicon; 0.6 micron; 125 mW; 2 GHz; 20 GHz; 5 V; DBS receivers; DNP-III; MMIC; SHF; Si; Si bipolar process; UHF; direct nitride passivated base surface; direct-broadcasting satellite; down converter IC; Bipolar integrated circuits; Costs; Frequency; Gain; Global Positioning System; Microwave devices; Microwave integrated circuits; Power dissipation; Satellite broadcasting; Voltage;

fLanguage

English

Journal_Title

Consumer Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0098-3063

Type

jour

DOI

10.1109/30.103195

Filename

103195