Title :
Characterisation of metal mirrors on GaAs
Author :
Babic, D.I. ; Mirin, R.P. ; Hu, E.L. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
2/15/1996 12:00:00 AM
Abstract :
The authors describe a Fabry-Perot technique for determining the reflectivity and the phase of the interface between semiconductor and a multilayer metal structure as it will be realised in actual device fabrication. The reflection coefficients of GaAs to Ti/Au, Pd/Au, Au and Ag interfaces are measured at 1.55 μm
Keywords :
Fabry-Perot interferometers; III-V semiconductors; gallium arsenide; integrated optics; mirrors; reflectivity; semiconductor-metal boundaries; 1.55 micron; Fabry-Perot technique; GaAs-Ag; GaAs-Au; GaAs-Pd-Au; GaAs-Ti-Au; device fabrication; interface; multilayer metal mirrors; phase; reflection coefficient; reflectivity; semiconductor substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960230
