AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE

Author

Zhang, Y.G. ; Gu, Y. ; Zhu, C. ; Li, A.Z. ; Liu, T.D.

Author_Institution

State Key Lab. of Functional Mater. for Informatics, Chinese Acad. of Sci., Shanghai, China

Volume

17

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

1265

Lastpage

1267

Abstract

Al_0.52In_0.48P-Ga_0.51In_0.49P-GaAs photovoltaic detectors using GaInP as the light absorption layer and AlInP as the widow layer have been fabricated by using gas source molecular beam epitaxy, and their performance has been characterized in detail. The detectors show infrared-blind and ultraviolet-enhanced features and have good response in visible band, which makes them a good candidate in certain applications. Excellent performance has been demonstrated on the detectors, a resistance area product of R₀A=1.3×10⁸ Ω·cm², and an open-circuit voltage of V_oc>1.05 V have been measured at room temperature.

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; optical fabrication; photodetectors; semiconductor growth; ultraviolet detectors; Al_0.52In_0.48P-Ga_0.51In_0.49P-GaAs; UV-enhanced photovoltaic detectors; gas source MBE; light absorption layer; molecular beam epitaxy; open-circuit voltage; resistance area product; Electromagnetic wave absorption; Gallium arsenide; Infrared detectors; Molecular beam epitaxial growth; Photoconducting materials; Photodetectors; Photovoltaic systems; Solar power generation; Temperature control; Temperature measurement; AlInP–GaInP; molecular beam epitaxy (MBE); photodetectors; photovoltaic;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.846485

Filename

1432797