Title :
2-gb/s CMOS optical integrated receiver with a spatially Modulated photodetector
Author :
Jutzi, M. ; Grozing, M. ; Gaugler, E. ; Mazioschek, W. ; Berroth, M.
Author_Institution :
Inst. for Electr. & Opt. Commun. Eng., Univ. of Stuttgart, Germany
fDate :
6/1/2005 12:00:00 AM
Abstract :
A monolithically integrated optical receiver fabricated in an unmodified 0.18-μm silicon complementary metal-oxide-semiconductor technology is presented. The receiver features a spatially modulated photodetector to suppress slow diffusion tails. The receiver circuit comprises a transimpedance amplifier, a limiting amplifier, and an output buffer. At 2 Gb/s and an incident wavelength of 850 nm, a receiver sensitivity of -8 dBm at a bit-error rate of 10/sup -9/ has been achieved.
Keywords :
CMOS analogue integrated circuits; diffusion; elemental semiconductors; error statistics; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical fabrication; optical receivers; photodetectors; silicon; spatial light modulators; 0.18 mum; 2 Gbit/s; 850 nm; CMOS optical integrated receiver; Si; bit-error rate; limiting amplifier; monolithically integrated optical receiver; output buffer; silicon complementary metal-oxide-semiconductor technology; spatially modulated photodetector; transimpedance amplifier; CMOS technology; Integrated optics; Optical amplifiers; Optical buffering; Optical modulation; Optical receivers; Optical sensors; Photodetectors; Silicon; Stimulated emission; Complementary metal–oxide–semiconductor (CMOS) analog integrated circuits; optical interconnections; optical receivers; photodetectors;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2005.846563
