Title :
Intrinsic sensitivity of Cd1-xZnxTe semiconductors for digital radiographic imaging
Author :
Giakos, G.C. ; Guntupalli, R. ; De Abreu-Garcia, J.A. ; Shah, N. ; Vedantham, S. ; Suryanarayanan, S. ; Chowdhury, S. ; Patnekar, N. ; Sumrain, S. ; Mehta, K. ; Evans, E. ; Orozco, A. ; Kumar, V. ; Ugweje, O. ; Moholkar, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Akron, OH, USA
Abstract :
The intrinsic sensitivity of cadmium zinc telluride (Cd1-xZnxTe) semiconductor detectors has been experimentally measured, within the X-ray diagnostic energy range. The results of this study indicate that the intrinsic efficiency of Cd1-xZnxTe can be increased by optimizing geometrical and physical detection parameters such as X-ray irradiation geometry, detector thickness, and applied electric field. These results indicate that Cd1-xZnxTe is a suitable candidate for digital imaging applications.
Keywords :
II-VI semiconductors; X-ray detection; cadmium compounds; diagnostic radiography; electric sensing devices; image sensors; zinc compounds; CdZnTe; X-ray detectors; X-ray diagnostic energy range; X-ray irradiation geometry; applied electric field; cadmium zinc telluride semiconductor detectors; detector intrinsic sensitivity; detector thickness; digital radiographic imaging; image enhancement; intrinsic material efficiency; Biomedical optical imaging; Image sensors; Optical imaging; Optical sensors; Radiography; Tellurium; X-ray detection; X-ray detectors; X-ray imaging; Zinc;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
DOI :
10.1109/TIM.2003.818563
