DocumentCode :
815060
Title :
Complementary two-transistor circuits and negative differential resistance
Author :
Trajkovic, Ljiljana ; Willson, Alan N., Jr.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Volume :
37
Issue :
10
fYear :
1990
fDate :
10/1/1990 12:00:00 AM
Firstpage :
1258
Lastpage :
1266
Abstract :
The DC behavior of nonlinear one-ports using two complementary Ebers-Moll-modeled transistors and lacking internal independent sources is discussed. It is proven that, in the absence of internal resistors, all such one-ports-irrespective of their internal topology and transistor parameter values-cannot exhibit negative differential resistance (NDR) for any value of an external biasing current source. One circuit using two complementary transistors and no resistors is of particular interest, since it is often cited as a two-transistor simplified model for silicon-controlled rectifier devices. The results demonstrate that either the transistor behavior unaccounted for in an Ebers-Moll-type model must be involved in this one-port´s NDR behavior, or the presence of internal resistors is essential to such a circuit´s behavior having even a generally correct qualitative character
Keywords :
bipolar transistor circuits; negative resistance; nonlinear network analysis; DC behavior; NDR; SCR devices; complementary Ebers-Moll-modeled transistors; external biasing current source; negative differential resistance; nonlinear one-ports; one-ports; p-n-p-n structures; silicon-controlled rectifier devices; two-transistor simplified model; Bipolar transistors; Circuit topology; Electronic circuits; Feedback circuits; Rectifiers; Resistors; SPICE; Semiconductor device modeling; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0098-4094
Type :
jour
DOI :
10.1109/31.103220
Filename :
103220
Link To Document :
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