Pseudo Y-Junction Single-Walled Carbon Nanotube Based Ambipolar Transistor Operating at Room Temperature

Author

Kim, Do-Hyun ; Huang, Jun ; Rao, Bangalore K. ; Choi, Wonbong

Author_Institution

Dept. of Mech. & Mater. Eng., Florida Int. Univ., Miami, FL

Volume

5

Issue

6

fYear

2006

Firstpage

731

Lastpage

736

Abstract

A nanoscale field-effect transistor (FET) was fabricated based on pseudo Y-junction single-walled carbon nanotubes (Y-SWNTs). The Y-junction transistor was modulated by a metallic branch of the Y-SWNTs, and exhibited ambipolar FET characteristics at room temperature. A subthreshold swing of 700 mV/decade and an on/off ratio of 10⁵ with a low off-state current of ~10^-13 A were obtained. Analysis of the electrical transport of pseudo Y-SWNTs is fundamental to the study of transport properties in a carbon nanotube mat (CNT-mat)

Keywords

bipolar transistors; carbon nanotubes; electrical conductivity; junction gate field effect transistors; nanotube devices; 293 to 298 K; C; CNT-mat; FET; Y-SWNTs; ambipolar FET; carbon nanotube mat; electrical transport properties; nanoscale field-effect transistor; off-state current; pseudo Y-junction single-walled carbon nanotube based ambipolar transistor; CNTFETs; Carbon nanotubes; FETs; Heterojunctions; Iron; Nanoscale devices; Power semiconductor switches; Resistors; Semiconductivity; Temperature; Ambipolar characteristics; Y-junction single-walled carbon nanotube; nanoscale junction;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.885028

Filename

4011930