Title :
A Novel Reference Scheme for Reading Passive Resistive Crossbar Memories
Author :
Mustafa, Jakob ; Waser, Rainer
Author_Institution :
Inst. of Mater. in Electr. Eng. & Inf. Technol. II, RWTH Aachen Univ.
Abstract :
A great effort today is concentrated on the development of resistive hysteretic materials and their related memory architecture. Resistive memories have a promising future to replace all current memory technologies to present an all-in-one memory solution. Passive resistive memories are of a special importance, since they can be scaled into the nanometer range without losing their functionality. This work is concerned with a novel scheme for generating reference voltages for the read operation. The scheme can be used with any passive crossbar based memory, regardless of the materials used for the implementation of the memory elements
Keywords :
CMOS memory circuits; network synthesis; CMOS; circuit design; passive crossbar array; reading passive resistive crossbar memories; resistive hysteretic materials; CMOS technology; Circuits; Costs; Hysteresis; Information technology; Manufacturing; Material storage; Memory architecture; Transistors; Voltage; Hysteretic resistive elements; nano-scale; passive crossbar array; reference scheme; resistive memory;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2006.885016
