A Novel Reference Scheme for Reading Passive Resistive Crossbar Memories

Author

Mustafa, Jakob ; Waser, Rainer

Author_Institution

Inst. of Mater. in Electr. Eng. & Inf. Technol. II, RWTH Aachen Univ.

Volume

5

Issue

6

fYear

2006

Firstpage

687

Lastpage

691

Abstract

A great effort today is concentrated on the development of resistive hysteretic materials and their related memory architecture. Resistive memories have a promising future to replace all current memory technologies to present an all-in-one memory solution. Passive resistive memories are of a special importance, since they can be scaled into the nanometer range without losing their functionality. This work is concerned with a novel scheme for generating reference voltages for the read operation. The scheme can be used with any passive crossbar based memory, regardless of the materials used for the implementation of the memory elements

Keywords

CMOS memory circuits; network synthesis; CMOS; circuit design; passive crossbar array; reading passive resistive crossbar memories; resistive hysteretic materials; CMOS technology; Circuits; Costs; Hysteresis; Information technology; Manufacturing; Material storage; Memory architecture; Transistors; Voltage; Hysteretic resistive elements; nano-scale; passive crossbar array; reference scheme; resistive memory;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2006.885016

Filename

4011934