DocumentCode :
815284
Title :
Group delay dispersion measurements in InGaAsP 1.3-μm optical amplifiers
Author :
Zenteno, Luis
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Volume :
7
Issue :
1
fYear :
1989
fDate :
1/1/1989 12:00:00 AM
Firstpage :
39
Lastpage :
44
Abstract :
Group delay dispersion (GDD) of ~15 ps/nm has been measured in a near-traveling-wave optical amplifier at a wavelength where measured gain ripple was ~2 dB, using the envelope phase-shift technique. This is compared to a measured GDD of ~180 ps/nm in a single-facet antireflection-coated amplifier biased below threshold with a gain ripple of ~17 dB. It is shown that these results agree qualitatively with standard theory. An important result is that GDD increases with the square of amplifier length. GDD can be reduced by an order of magnitude if gain ripple is reduced to 0.5 dB
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor junction lasers; III-V semiconductors; InGaAsP; envelope phase-shift technique; gain ripple; group delay dispersion measurements; near-traveling-wave optical amplifier; single-facet antireflection-coated amplifier; Dispersion; Gain measurement; Optical amplifiers; Phase measurement; Propagation delay; Semiconductor optical amplifiers; Stimulated emission; System performance; Transfer functions; Wavelength measurement;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.17730
Filename :
17730
Link To Document :
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