Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes

Author

Hardy, M.T. ; Feng Wu ; Chia-Yen Huang ; Yuji Zhao ; Feezell, Daniel F. ; Nakamura, Shigenari ; Speck, James S. ; DenBaars, Steven P.

Author_Institution

Mater. Dept., Univ. of California, Santa Barbara, Santa Barbara, CA, USA

Volume

26

Issue

1

fYear

2014

fDate

Jan.1, 2014

Firstpage

43

Lastpage

46

Abstract

Dark triangle defects (DTDs) are common nonradiative defects in semipolar (202̅1) oriented green quantum wells (QWs), commonly used in green laser diodes (LDs). We show that DTDs do not appear “as-grown,” and DTD size depends strongly on post-QW-growth annealing time and temperature. Using low temperature p-GaN, we prevent catastrophic QW damage and directly compare LDs with GaN and AlGaN containing barriers. The GaN barrier LD exhibited a lasing wavelength of 511 nm, reduced operating voltage, and the lowest threshold current density, likely due to enhanced optical confinement factor and the elimination of very low growth temperature AlGaN in the active region.

Keywords

III-V semiconductors; annealing; gallium compounds; laser beams; quantum well lasers; wide band gap semiconductors; DTD size; GaN; barrier composition; catastrophic damage; dark triangle defects; lasing wavelength; nonradiative defects; optical confinement factor; post-QW-growth annealing; semipolar green laser diodes; semipolar oriented green quantum wells; thermal damage; threshold current density; wavelength 511 nm; Aluminum gallium nitride; Annealing; Diode lasers; Gallium nitride; Photonics; Temperature measurement; Quantum well lasers; epitaxial defects; green laser diodes; semipolar GaN; thermal stability;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2288927

Filename

6655964