Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates

Author

Zhao, Hanmin ; MacDougal, Michael H. ; Dapkus, Daniel P. ; Uppal, Kushant ; Cheng, Yong ; Yang, Gye-Mo

Author_Institution

Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

196

Lastpage

202

Abstract

High performance buried heterostructure InGaAs-GaAs-AlGaAs quantum-well lasers and laser arrays with tight spatial confinement of the electrical current and the optical fields have been fabricated by metalorganic chemical vapor deposition. The lasers ace fabricated in a single growth step, using nonplanar substrates as a template for the active region definition. CW room temperature threshold currents, as low as 0.5 mA and 0.6 mA, are obtained for as-cleaved double and single quantum-well lasers, respectively. External quantum efficiencies exceeding 80% are obtained in the same devices. High-reflectivity facet-coated lasers have room temperature CW threshold currents as low as 0.145 mA with 10% external quantum efficiency. Lasers made by this technique have high yield and uniformity, and are suitable for low threshold array applications

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor laser arrays; vapour phase epitaxial growth; 0.145 mA; 0.5 mA; 0.6 mA; 10 percent; 298 K; 80 percent; CW room temperature threshold currents; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs lasers; active region definition; electrical current; external quantum efficiencies; external quantum efficiency; facet-coated lasers; high performance buried heterostructure; laser arrays; low threshold array applications; metalorganic chemical vapor deposition; nonplanar substrates; optical fields; quantum-well lasers; tight spatial confinement; Chemical lasers; Chemical vapor deposition; Optical arrays; Optical control; Optical waveguides; Quantum well lasers; Semiconductor laser arrays; Substrates; Temperature; Threshold current;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401197

Filename

401197