DocumentCode
815578
Title
Low-threshold high-T0 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region
Author
Shchekin, O.B. ; Deppe, D.G.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
14
Issue
9
fYear
2002
Firstpage
1231
Lastpage
1233
Abstract
P-type doping is used to demonstrate high-To, low-threshold 1-3 μm InAs quantum-dot lasers. A 5-μm-wide oxide confined stripe laser with a 700-μm-long cavity exhibits a pulsed T0 = 213 K (196 K CW) from 0/spl deg/C to 80/spl deg/C. At room temperature, the devices have a CW threshold current of /spl sim/4.4 mA with an output power over 15 mW. The threshold at 100/spl deg/C is 8.4 mA with an output power over 8 mW.
Keywords
III-V semiconductors; current density; indium compounds; laser cavity resonators; quantum well lasers; semiconductor doping; semiconductor quantum dots; 0 to 80 C; 1.3 micron; 100 C; 15 mW; 4.4 mA; 5 micron; 700 micron; 8 mW; 8.4 mA; CW threshold current; GaAs; InAs-AlGaAs; active region; differential gain; high characteristic temperature; low-threshold InAs quantum-dot lasers; output power; oxide-confined stripe laser; p-type modulation doping; room temperature; Doping; Epitaxial layers; Fiber lasers; Gallium arsenide; Laser theory; Power lasers; Quantum dot lasers; Semiconductor lasers; Temperature; Threshold current;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2002.801597
Filename
1032336
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