• DocumentCode
    815591
  • Title

    An improved detector scheme for nondestructive reverse bias safe operating area test systems

  • Author

    Turner, Allen E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
  • Volume
    41
  • Issue
    5
  • fYear
    1992
  • fDate
    10/1/1992 12:00:00 AM
  • Firstpage
    657
  • Lastpage
    662
  • Abstract
    An enhanced second-breakdown detector for a nondestructive reverse bias safe operating area test system has been developed. The detector corrects the previously reported deficiencies in the original detector. In addition, the enhancements to the detector can detect a new second-breakdown waveform that had not previously been identified
  • Keywords
    bipolar transistors; electric breakdown of solids; insulated gate field effect transistors; nondestructive testing; power transistors; semiconductor device testing; RBSOA testing; nondestructive reverse bias safe operating area; power MOSFET; power bipolar transistors; second-breakdown detector; second-breakdown waveform; semiconductor device testing; test; Breakdown voltage; Circuit testing; Delay effects; Detectors; Electric breakdown; Fabrication; Low voltage; Nondestructive testing; Power system protection; System testing;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/19.177338
  • Filename
    177338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=815591