Title :
An improved detector scheme for nondestructive reverse bias safe operating area test systems
Author :
Turner, Allen E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Clemson Univ., SC, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
An enhanced second-breakdown detector for a nondestructive reverse bias safe operating area test system has been developed. The detector corrects the previously reported deficiencies in the original detector. In addition, the enhancements to the detector can detect a new second-breakdown waveform that had not previously been identified
Keywords :
bipolar transistors; electric breakdown of solids; insulated gate field effect transistors; nondestructive testing; power transistors; semiconductor device testing; RBSOA testing; nondestructive reverse bias safe operating area; power MOSFET; power bipolar transistors; second-breakdown detector; second-breakdown waveform; semiconductor device testing; test; Breakdown voltage; Circuit testing; Delay effects; Detectors; Electric breakdown; Fabrication; Low voltage; Nondestructive testing; Power system protection; System testing;
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
