Title :
650-mW single lateral mode power from tapered and flared buried ridge laser
Author :
Swint, R.B. ; Huber, A.E. ; Yeoh, T.S. ; Woo, C.Y. ; Coleman, J.J. ; Faircloth, B.O. ; Zediker, M.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Very high single lateral mode output powers of 650 mW are obtained from a diode laser with a unique waveguide design. The waveguide flares in the lateral dimension to create a larger spot size on the facet and simultaneously tapers in the transverse dimension to inhibit propagation of higher order lateral modes. These GaAs buried ridge devices are fabricated by selective area epitaxy.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; laser modes; quantum well lasers; ridge waveguides; waveguide lasers; 1.04 micron; 650 mW; 650-mW single lateral mode power; GaAs buried ridge devices; GaAs-In/sub 0.29/Ga/sub 0.71/As; MOCVD; diode laser; higher order lateral mode propagation suppression; lateral dimension flaring; quantum well optical confinement factor; selective area epitaxy; spot size; tapered flared buried ridge laser; transverse dimension tapering; very high single lateral mode output powers; waveguide design; Epitaxial growth; Erbium-doped fiber lasers; Laser modes; Optical design; Optical propagation; Optical waveguides; Power generation; Power lasers; Pump lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.801072
