Performance degradation of APD-optical receivers due to dark current generated within the multiplication region

General expressions for the effective gain and effective excess noise factor associated with dark current generated within the high-field region of an avalanche photodiode (APD) are given. The influence of this background current on the performance of a uniformly multiplying APD receiver is evaluated and compared with that due to a dark current component generated outside the multiplication region (diffusion current). The results indicate clearly that the former dark current component has less effect on receiver performance than the latter, especially when hole and electron ionization rates are very different.<>