Title :
High-temperature and high-speed operation of a 1.3-μm uncooled InGaAsP-InP DFB laser
Author :
Dongsoo Bang ; Jongin Shim ; Joongkoo Kang ; Minsik Um ; Sangmin Park ; Sangmoon Lee ; Donghoon Jang ; Yungseon Eo
Author_Institution :
Optoelectronics Div., Samsung Electron. Co. Ltd, Kyungki, South Korea
Abstract :
1.3-μm uncooled InGaAsP-InP loss-coupled distributed feedback lasers operating over 10 Gb/s and at 85/spl deg/C were successfully fabricated. In order to achieve high-speed and high-temperature operation simultaneously, the following are thoroughly investigated: modulation-doped and strain-compensated multiple-quantum-well active layers, Fe-doped buried-heterostructure, coupling coefficient of loss-coupled grating, detuning lasing wavelength from the gain peak, and facet coatings. The authors also demonstrate 10 Gb/s transmission with negligible dispersion power penalty over 20 km of nondispersion-shifted fiber at 10 Gb/s for temperatures ranging from 25/spl deg/C to 85/spl deg/C.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; high-speed optical techniques; indium compounds; optical losses; optical transmitters; quantum well lasers; 1.3 micron; 10 Gb/s transmission; 10 Gbit/s; 12.0 GHz; 17 mW; 20 km; 25 to 85 C; 3 dB-bandwidth; 36 mA; Fe-doped buried-heterostructure; InGaAsP-InP loss-coupled distributed feedback lasers; InGaAsP:Fe-InP; dispersion power penalty; facet coatings; high-temperature high-speed operation; lasing wavelength detuning; loss-coupled grating coupling coefficient; modulation-doped strain-compensated multiple-quantum-well active layers; nondispersion-shifted fiber; output power; threshold current; uncooled InGaAsP-InP DFB laser; Coatings; Distributed feedback devices; Gratings; Laser feedback; Optical fiber LAN; Optical materials; Power lasers; Quantum well devices; Quantum well lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.801044
